bc 817w, bc 818w 1 oct-20-1999 npn silicon af transistors ? for general af applications ? high collector current ? high current gain ? low collector-emitter saturation voltage ? complementary types: bc 807w, bc 808w (pnp) 1 3 vso05561 2 type marking pin configuration package bc 817-16w bc 817-25w bc 817-40w bc 818-16w bc 818-25w bc 818-40w 6as 6bs 6cs 6es 6fs 6gs 1 = b 1 = b 1 = b 1 = b 1 = b 1 = b 2 = e 2 = e 2 = e 2 = e 2 = e 2 = e 3 = c 3 = c 3 = c 3 = c 3 = c 3 = c sot-323 sot-323 sot-323 sot-323 sot-323 sot-323 maximum ratings parameter symbol bc 817w bc 818w unit collector-emitter voltage v ceo 45 25 v collector-base voltage v cbo 50 30 emitter-base voltage v ebo 5 5 dc collector current i c 500 ma peak collector current i cm 1 a base current ma 100 i b peak base current i bm 200 total power dissipation , t s = 130 c p tot 250 mw junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 215 k/w junction - soldering point r thjs 80 1) package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bc 817w, bc 818w 2 oct-20-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 10 ma, i b = 0 bc 817w bc 818w v (br)ceo 45 25 - - - - v collector-base breakdown voltage i c = 10 a, i b = 0 bc 817w bc 818w v (br)cbo 50 30 - - - - emitter-base breakdown voltage i e = 10 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 25 v, i e = 0 i cbo - - 100 na collector cutoff current v cb = 25 v, i e = 0 , t a = 150 c i cbo - - 50 a emitter cutoff current v eb = 4 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 100 ma, v ce = 1 v h fe -grp. 16 h fe -grp. 25 h fe -grp. 40 h fe 100 160 250 160 250 350 250 400 630 - dc current gain 1) i c = 300 ma, v ce = 1 v h fe -grp. 16 h fe -grp. 25 h fe -grp. 40 h fe 60 100 170 - - - - - - collector-emitter saturation voltage1) i c = 500 ma, i b = 50 ma v cesat - - 0.7 v base-emitter saturation voltage 1) i c = 500 ma, i b = 50 ma v besat - - 1.2 v 1) pulse test: t 300 s, d = 2%
bc 817w, bc 818w 3 oct-20-1999 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t - 170 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 6 - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb - 60 -
bc 817w, bc 818w 4 oct-20-1999 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t s 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t a 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 collector cutoff current i cbo = f ( t a ) v cbo = 25v 0 10 ehp00221 bc 817/818 a t 150 0 5 10 cbo na 50 100 1 10 2 10 4 10 ?c typ max 10 3
bc 817w, bc 818w 5 oct-20-1999 dc current gain h fe = f ( i c ) v ce = 1v 10 ehp00224 bc 817/818 -1 3 10 ma 0 10 3 10 5 5 10 0 10 1 10 1 c fe h 2 10 2 10 ? c 100 5 25 ? c -50 ? c transition frequency f t = f ( i c ) v ce = 5v 10 ehp00218 bc 817/818 03 10 ma 1 10 3 10 5 5 10 1 10 2 10 2 c t f mhz collector-emitter saturation voltage i c = f ( v cesat ), h fe = 10 0 10 ehp00215 cesat v 0.4 v 0.8 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 0.2 0.6 -50 25 150 ? c ? c ? c base-emitter saturation voltage i c = f ( v besat ), h fe = 10 0 10 ehp00222 bc 817/818 besat v 2.0 v 4.0 -1 10 0 10 1 3 10 5 5 c ma 5 2 10 1.0 3.0 ? c -50 25 ? c ? c 150
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